Highly electronegative metallic contacts to semiconductors using polymeric sulfur nitride

Highly electronegative contacts to compound semiconductorsa>

Gold contacts to most III-V and II-VI compounds position the Fermi level at the interface well into the energy gaps of the semiconductors. To position the Fermi level closer to a conduction-band edge, particularly in the more ionic semiconductors, one may substitute a more electropositive element like AI for the Au contact. To position the Fermi level closer to a valence-band edge, however, the...

Electrical contacts to two-dimensional semiconductors.

The performance of electronic and optoelectronic devices based on two-dimensional layered crystals, including graphene, semiconductors of the transition metal dichalcogenide family such as molybdenum disulphide (MoS2) and tungsten diselenide (WSe2), as well as other emerging two-dimensional semiconductors such as atomically thin black phosphorus, is significantly affected by the electrical cont...

Nanosphere Lithography for Nitride Semiconductors

Polarons in Wurtzite Nitride Semiconductors

Polaron binding energy and effective mass are calculated for semiconductors with wurtzite crystalline structure from the first order electron-phonon corrections to the self-energy. A recently introduced Fröhlich-like electron-phonon interaction Hamiltonian which accounts for the LO and TO polarizations mixing due to the anisotropy is used in the calculation. The polaronic damping rates are eval...

2D crystal semiconductors: Intimate contacts.

news & views devices. Furthermore, separation and recombination of photoinduced electron– hole pairs at a heterojunction interface are primary mechanisms governing the operation of solar cells, photodetectors and light-emitting devices. Both Gong and collaborators and Duan and colleagues managed to electrically address the lateral heterojunctions and perform transport measurements to investigat...